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SMD Type
Silicon PNP Epitaxial Planar Type 2SB928A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High collector to emitter VCEO High collector power dissipation PC
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation TC=25 Ta=25 Junction temperature Storage temperature * Single pulse, Pw=10ms Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating -200 -180 -6 -3 -2 30 1.3 150 -55 to 150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Symbol ICBO IEBO VCBO VCEO VEBO hFE VBE VCE(sat) fT Testconditons VCB = -200V, IE = 0 VEB = -4V, IC = 0 IC = -500iA, IE = 0 IC = -5mA, IB = 0 IE = -500iA, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -400mA VCE = -10V, IC = -400mA IC = -500mA, IB = -50mA VCE = -10V, IC = -0.5A, f = 10MHz 30 -200 -180 -6 60 50 -1 -1 V V MHz 240 Min Typ Max -50 -50 Unit iA iA V V V
hFE Classification
Rank hFE Q 60 to 140 P 100 to 240
3.80
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